FQA7N90
Overview
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
- 7.4A, 900V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !
- ◀ ▲ *
- G! G DS TO-3P FQA Series ! S
