| Title | N채널 900V 7.4A(Tc) 198W(Tc) 스루홀 TO-3P |
| Description | These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switch mode ... |
| Features |
• • • • • • 7.4A, 900V, RDS(on) = 1.55Ω @VGS = 10 V Low gate charge ( typical 45 nC) Low Crss ( typical 20 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! ● ◀ ▲ ● ● G! G DS TO-3P FQA Series ! S Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25°C unless otherwise noted Paramete... |
| Datasheet |
 FQA7N90 Datasheet - 674.08KB |
| Distributor |
DigiKey |
| Stock | 0 In stock |
| Price |
No price available
|
| BuyNow |
 BuyNow - Manufacturer a onsemi FQA7N90
|
| Distributor | Stock | Price | BuyNow |
|---|---|---|---|
DigiKey |
No price available |
BuyNow |
|
 Rochester Electronics |
1000 units: 1.38 USD 500 units: 1.46 USD 100 units: 1.53 USD 25 units: 1.59 USD 1 units: 1.63 USD |
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