FQA11N90_F109 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

* 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A
* Low Gate Charge (Typ. 72 nC)
* Low Crss (Typ. 30 pF)
* 100% Avalanche Tested
* RoH.

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superio.

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