Datasheet4U Logo Datasheet4U.com

FQA11N90 - 900V N-Channel MOSFET

Description

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology.

Features

  • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max. ) @ VGS = 10 V, ID = 5.7 A.
  • Low Gate Charge (Typ. 72 nC).
  • Low Crss (Typ. 30 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FQA11N90 N-Channel MOSFET Transistor Inchange Semiconductor
FQA11N90-F109 N-Channel MOSFET ON Semiconductor
FQA11N90C-F109 N-Channel MOSFET ON Semiconductor
FQA10N80C-F109 N-Channel QFET MOSFET ON Semiconductor
FQA13N80-F109 N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FQA11N90C 900V N-Channel MOSFET
FQA11N90C_F109 MOSFET
FQA11N90_F109 N-Channel QFET MOSFET
FQA11N40 400V N-Channel MOSFET
FQA10N60C 600V N-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET FQA11N90 / FQA11N90_F109 N-Channel QFET® MOSFET 900 V, 11.4 A, 960 mΩ April 2013 Features • 11.4 A, 900 V, RDS(on) = 960 mΩ (Max.) @ VGS = 10 V, ID = 5.7 A • Low Gate Charge (Typ. 72 nC) • Low Crss (Typ. 30 pF) • 100% Avalanche Tested • RoHS Compliant Description This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power supplies, active power factor correction (PFC), and electronic lamp ballasts.
Published: |