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FDZ663P - MOSFET

Description

Max rDS(on) = 134 mΩ at VGS = -4.5 V, ID = -2 A Max rDS(on) = 171 mΩ at VGS = -2.5 V, ID = -1.5 A Max rDS(on) = 216 mΩ at VGS = -1.8 V, ID = -1 A Max rDS(on) = 288 mΩ at VGS = -1.5 V, ID = -1 A

Occupies only 0.64 mm2 of PCB area.

Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ663P P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET FDZ663P December 2011 P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -2.7 A, 134 mΩ Features General Description „ Max rDS(on) = 134 mΩ at VGS = -4.5 V, ID = -2 A „ Max rDS(on) = 171 mΩ at VGS = -2.5 V, ID = -1.5 A „ Max rDS(on) = 216 mΩ at VGS = -1.8 V, ID = -1 A „ Max rDS(on) = 288 mΩ at VGS = -1.5 V, ID = -1 A „ Occupies only 0.64 mm2 of PCB area. Less than 16% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.4 mm height when mounted to PCB „ RoHS Compliant Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ663P minimizes both PCB space and rDS(on).
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