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FDZ661PZ - MOSFET

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General Description

„ Max rDS(on) = 140 mΩ at VGS = -4.5 V, ID = -2 A „ Max rDS(on) = 182 mΩ at VGS = -2.5 V, ID = -1.5 A „ Max rDS(on) = 231 mΩ at VGS = -1.8 V, ID = -1 A „ Max rDS(on) = 315 mΩ at VGS = -1.5 V, ID = -1 A „ Occupies only 0.64 mm2 of PCB area.

Less than 16% of the area of 2 x 2 BGA „ Ultra-thin package: less than 0.4 mm height when mounted to PCB „ HBM ESD protection level > 2 kV (Note3) „ RoHS Compliant Designed on Fairchild's advanced 1.5 V PowerTrench® process with state of the art "fine pitch" Thin WLCSP packaging process, the FDZ661PZ minimizes both PCB space and rDS(on).

This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra-low profile (0.4 mm) and small (0.8x

Overview

FDZ661PZ P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET FDZ661PZ December 2011 P-Channel 1.5 V Specified PowerTrench® Thin WL-CSP MOSFET -20 V, -2.

Key Features

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