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FDZ4670 - N-Channel MOSFET

General Description

Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) .

Key Features

  • Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A.
  • Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A.
  • Ultra-thin package: less than 0.85mm height when mounted to PCB.
  • Outstanding thermal transfer characteristics.
  • Ultra-low gate charge x rDS(on) product.
  • RoHS Compliant General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ4670 N-Channel PowerTrench®MOSFET BGA May 2007 FDZ4670 N-Channel PowerTrench®MOSFET BGA 30V, 25A, 2.5mΩ tm Features „ Max rDS(on) = 2.5mΩ at VGS = 10V, ID = 25A „ Max rDS(on) = 4.5mΩ at VGS = 4.5V, ID = 18.5A „ Ultra-thin package: less than 0.85mm height when mounted to PCB „ Outstanding thermal transfer characteristics „ Ultra-low gate charge x rDS(on) product „ RoHS Compliant General Description Combining Farichild’s 30V PowerTrench process with state-ofthe-art BGA packaging, the FDZ4670 minimize both PCB space and rDS(on) . This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handing capacity, ultra-low profile packaging, low gate charge and low rDS(on).