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FDZ4670S Datasheet N-Channel MOSFET

Manufacturer: Fairchild (now onsemi)

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General Description

Combining Fairchild's 30V PowerTrench® process with state-of-the-art BGA packaging, the FDZ4670S minimizes both PCB space and rDS(on).

This BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capacity, ultra-low profile packaging, low gate charge and low rDS(on) incorporating SyncFET technology.

This device has the added benefit of an efficient monolithic Schottky body diode to reduce Trr and diode forward voltage.

Overview

FDZ4670S N-Channel PowerTrench® SyncFET TM March 2008 FDZ4670S N-Channel PowerTrench® SyncFET TM 30V, 25A, 2.

Key Features

  • Max rDS(on) = 2.4mΩ at VGS = 10V, ID = 25A.
  • Max rDS(on) = 4.0mΩ at VGS = 4.5V, ID = 19A.
  • Ultra-thin package: less than 0.85mm height when mounted to PCB.
  • Outstanding thermal transfer characteristics.
  • Ultra-low gate charge x rDS(on) product.
  • RoHS Compliant General.

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