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FDZ2554P - Monolithic Common Drain P-Channel 2.5V Specified PowerTrench

Description

Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and RDS(ON).

Features

  • 6.5 A,.
  • 20 V. RDS(ON) = 28 mΩ @ VGS =.
  • 4.5 V RDS(ON) = 45 mΩ @ VGS =.
  • 2.5 V.
  • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8.
  • Ultra-thin package: less than 0.90 mm height when mounted to PCB.
  • Outstanding thermal transfer characteristics: significantly better than SO-8.
  • Ultra-low Qg x RDS(ON) figure-of-merit.
  • High power and current handling capability.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDZ2554P July 2003 FDZ2554P Monolithic Common Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET   General Description Combining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and RDS(ON). This monolithic common drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features • –6.5 A, –20 V. RDS(ON) = 28 mΩ @ VGS = –4.5 V RDS(ON) = 45 mΩ @ VGS = –2.5 V • Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 • Ultra-thin package: less than 0.
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