FDZ2554P Datasheet | Fairchild Semiconductor

July 2003 Monolithic mon Drain P-Channel 2.5V Specified PowerTrench BGA MOSFET   General Description bining Fairchild’s advanced 2.5V specified PowerTrench process with state-of-the-art BGA packaging, the FDZ2554P minimizes both PCB space and RDS(ON). This monolithic mon drain BGA MOSFET embodies a breakthrough in packaging technology which enables the device to bine excellent thermal transfer characteristics, high current handling capability, ultra-low profile packaging, low gate charge, and low RDS(ON). Features - - 6.5 A, - 20 V. RDS(ON) = 28 mΩ @ VGS = - 4.5 V RDS(ON) = 45 mΩ @ VGS = - 2.5 V - Occupies only 0.10 cm2 of PCB area: 1/3 the area of SO-8 -...