FDZ1323NZ Datasheet, Fairchild Semiconductor

* Max rS1S2(on) = 13 mΩ at VGS = 4.5 V, IS1S2 = 1 A
* Max rS1S2(on) = 13 mΩ at VGS = 3.8 V, IS1S2 = 1 A
* Max rS1S2(on) = 16 mΩ at VGS = 3.1 V, IS1S2 = 1 A

It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild’s advanced Power.

This device is designed specifically as a single package solution for Li-Ion battery pack protection circuit and other ultra-portable applications. It features two common drain N-channel MOSFETs, which enables bidirectional current flow, on Fairchild.