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MOSFET – P-Channel, POWERTRENCH), Common Drain: 1.5 V, WLCSP
-20 V, -3 A, 126 mW
FDZ1905PZ
General Description This device is designed specifically as a single package solution for
the battery charge switch in cellular handset and other ultra−portable applications. It features two common drain P−channel MOSFETs, which enables bidirectional current flow, on ON Semiconductor’s advanced 1.5 V POWERTRENCH process with state of the art “low pitch” WLCSP packaging process, the FDZ1905PZ minimizes both PCB space and rS1S2(on). This advanced WLCSP MOSFET embodies a breakthrough in packaging technology which enables the device to combine excellent thermal transfer characteristics, ultra−low profile packaging, low gate charge, and low rS1S2(on).
Features
• Max rS1S2(on) = 126 mW at VGS = –4.
FDZ1905PZ Datasheet
