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FDY4001CZ - Complementary N & P-Channel PowerTrench MOSFET

General Description

This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V.

Level shifting Power Supply Converter Circuits Load/Power Swit

Key Features

  • Q1: N-Channel.
  • Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA.
  • Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA.
  • Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General.

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FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET August 2006 FDY4001CZ Complementary N & P-Channel PowerTrench® MOSFET Features Q1: N-Channel „ Max rDS(on) = 5Ω at VGS = 4.5V, ID = 200mA „ Max rDS(on) = 7Ω at VGS = 2.5V, ID = 175mA „ Max rDS(on) = 9Ω at VGS = 1.8V, ID = 150mA Q2: P-Channel tm General Description This Complementary N & P-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench® process to optimize the rDS(ON) @ VGS=2.5V and specify the rDS(ON) @ VGS = 1.8V. Applications „ Level shifting „ Power Supply Converter Circuits „ Load/Power Switching Cell Phones, Pagers „ Max rDS(on) = 8Ω at VGS = -4.5V, ID = -150mA „ Max rDS(on) = 12Ω at VGS = -2.5V, ID = -125mA „ Max rDS(on) = 15Ω at VGS = -1.