FDY302NZ Datasheet | Fairchild Semiconductor

Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. IGN Applications ES - Li-Ion Battery Pack - 600 m A, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 500 mΩ @ VGS = 2.5 V - ESD protection diode (note 3) - Ro HS pliant UOER NDEi W D 1S F m N G 1 INDED onse ATIO G NOMTMETNYOUINRFORM S 2 OREC TAC OR D COT ON E F Absolute Maximum Ratings TA=25o C unless otherwise noted ISIS N E C TIV Symbol Parameter Ratings E AS NTA VDS D IC LE E VGS V P ES ID IS DE EPR PD TH R TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation (Steady State) (Note 1a) (Note 1a) (Note 1b) Operating and Storage Junction Temperature 20 ± 12 600 1000 625 446 - 55 to +150 3D Unit s V V m A m W °C Range Thermal Characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1a) RθJA Thermal Resistance, Junction-to-Ambient (Note 1b) °C/W Package Marking and Ordering...