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FDY302NZ - Single N-Channel 2.5V Specified PowerTrench MOSFET

Key Features

  • This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. IGN.

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FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET FDY302NZ Single N-Channel 2.5V Specified PowerTrench® MOSFET JUNE 2024 General Description Features This Single N-Channel MOSFET has been designed using Fairchild Semiconductor’s advanced Power Trench process to optimize the RDS(ON) @ VGS = 2.5V. IGN Applications ES • Li-Ion Battery Pack • 600 mA, 20 V RDS(ON) = 300 mΩ @ VGS = 4.5 V RDS(ON) = 500 mΩ @ VGS = 2.