FDU8882 mosfet equivalent, n-channel mosfet.
! rDS(ON) = 11.5mΩ, VGS = 10V, ID = 35A ! rDS(ON) = 15mΩ, VGS = 4.5V, ID = 35A ! High performance trench technology for extremely low
rDS(ON) ! Low gate charge ! High pow.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching s.
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