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FDU8874 - N-Channel MOSFET

General Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for low gate charge, low rDS(ON) and fast switching speed.

DC/DC converters Fea

Key Features

  • rDS(ON) = 5.1mΩ, VGS = 10V, ID = 35A.
  • rDS(ON) = 6.4mΩ, VGS = 4.5V, ID = 35A.
  • High performance trench technology for extremely low rDS(ON).
  • Low gate charge.
  • High power and current handling capability.
  • RoHS Compliant D G S DTO-P-2A5K2 (TO-252) GDS I-PAK (TO-251AA) MOSFET Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS VGS ID Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (TC = 25oC, VGS =.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8874 / FDU8874 March 2015 FDD8874 / FDU8874 N-Channel PowerTrench® MOSFET 30V, 116A, 5.1mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(ON) and fast switching speed. Applications • DC/DC converters Features • rDS(ON) = 5.1mΩ, VGS = 10V, ID = 35A • rDS(ON) = 6.4mΩ, VGS = 4.