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FDU6N25 - N-Channel MOSFET

General Description

UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology.

This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.

Key Features

  • RDS(on) = 0.9 Ω (Typ. ) @ VGS = 10 V, ID = 2.2 A.
  • Low Gate Charge (Typ. 4.5 nC).
  • Low Crss (Typ. 5 pF).
  • 100% Avalanche Tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDU6N25 — N-Channel UniFETTM MOSFET FDU6N25 N-Channel UniFETTM MOSFET 250 V, 4.4 A, 1.1 Ω Features • RDS(on) = 0.9 Ω (Typ.) @ VGS = 10 V, ID = 2.2 A • Low Gate Charge (Typ. 4.5 nC) • Low Crss (Typ. 5 pF) • 100% Avalanche Tested Applications • LCD/LED/PDP TV • Consumer Appliances • Lighting • Uninterruptible Power Supply • AC-DC Power Supply November 2013 Description UniFETTM MOSFET is Fairchild Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength.