The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
FDD6780A / FDU6780A_F071 N-Channel Power Trench® MOSFET
January 2009
FDD6780A / FDU6780A_F071
N-Channel PowerTrench® MOSFET
25 V, 8.6 mΩ Features
Max rDS(on) = 8.6 mΩ at VGS = 10 V, ID = 16.4 A Max rDS(on) = 19.0 mΩ at VGS = 4.5 V, ID = 12.2 A 100% UIL test RoHS Compliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed.
Applications
Vcore DC-DC for Desktop Computers and Servers VRM for Intermediate Bus Architecture
D
D G G D S D-PAK (TO-252) S Short-Lead I-PAK (TO-251AA) S G
MOSFET Maximum Ratings TC = 25 °C unless otherwise noted
Symbol www.