FDS6699S Key Features
- 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky body diode
- High performance trench technology for extremely low
- High power and current handling capability
- 100% RG (Gate Resistance) tested
