FDS6699S
Description
The FDS6699S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.
Key Features
- 21 A, 30 V Max RDS(ON) = 3.6 mΩ @ VGS = 10 V Max RDS(ON) = 4.5 mΩ @ VGS = 4.5 V
- Includes SyncFET Schottky body diode
- High performance trench technology for extremely low RDS(ON) and fast switching
- High power and current handling capability
- 100% RG (Gate Resistance) tested
