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FDS6689S - 30V N-Channel PowerTrench SyncFET

Description

The FDS6689S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

Features

  • 16 A, 30 V. RDS(ON) = 5.4 mΩ @ VGS = 10 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V.
  • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching.
  • High power and current handling capability 100% RG (Gate Resistance) tested.

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Full PDF Text Transcription

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FDS6689S February 2005 FDS6689S 30V N-Channel PowerTrench® SyncFET™ General Description The FDS6689S is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge. The FDS6688S includes an integrated Schottky diode using Fairchild’s monolithic SyncFET technology. Features • 16 A, 30 V. RDS(ON) = 5.4 mΩ @ VGS = 10 V RDS(ON) = 6.5 mΩ @ VGS = 4.5 V • • Includes SyncFET Schottky body diode High performance trench technology for extremely low RDS(ON) and fast switching • • High power and current handling capability 100% RG (Gate Resistance) tested Applications www.DataSheet4U.
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