FDS6688 Datasheet | Fairchild Semiconductor

December 2001 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features - 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V - Ultra-low gate charge (40 nC typical) - High performance trench technology for extremely low RDS(ON) - High power and current handling capability Applications - DC/DC converter D D SO-8 DD D D 5 6 4 3 2 1 Pin 1...