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FDS6688 - 30V N-Channel PowerTrench MOSFET

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers.

It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.

Features

  • 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.5 V.
  • Ultra-low gate charge (40 nC typical).
  • High performance trench technology for extremely low RDS(ON).
  • High power and current handling capability.

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Datasheet preview – FDS6688

Datasheet Details

Part number FDS6688
Manufacturer Fairchild Semiconductor
File Size 141.09 KB
Description 30V N-Channel PowerTrench MOSFET
Datasheet download datasheet FDS6688 Datasheet
Additional preview pages of the FDS6688 datasheet.

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Full PDF Text Transcription

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FDS6688 December 2001 FDS6688 30V N-Channel PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package. Features • 16 A, 30 V. RDS(ON) = 6 mΩ @ VGS = 10 V RDS(ON) = 7 mΩ @ VGS = 4.
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