FDS6064N3
Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for “low side” synchronous rectifier operation, providing an extremely low RDS(ON) in a small package.
Applications
- Synchronous rectifier
- DC/DC converter
- FLMP SO-8 package: Enhanced thermal performance in industry-standard package size
5 6 7 8
Bottom-side Drain Contact
4 3 2 1
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current
- Continuous
- Pulsed Power Dissipation
TA=25o C unless otherwise noted
Parameter
Ratings
20 ±8
(Note 1a)
Units
V A W °C
23 60 3.0
- 55 to +150
(Note 1a)
Operating and Storage Junction Temperature Range
Thermal Characteristics
RθJA RθJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a)
40 0.5
°C/W
Package Marking and Ordering Information
Devi...
