FDPC5018SG
Description
Q1: N-Channel - Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A - Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel - Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A - Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A - Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses - MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing This device includes two specialized N-Channel MOSFETs in a dual package.
