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FDPC5018SG - MOSFET

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FDPC5018SG Product details

Description

Q1: N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing This device includes two special

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