FDPC5018SG Description
N-Channel Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A Q2: N-Channel Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A Low Inductance Packaging Shortens Rise/Fall Times, Result- ing in Lower Switching Losses MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing This...
FDPC5018SG Key Features
- Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 17 A
- Max rDS(on) = 6.5 mΩ at VGS = 4.5 V, ID = 14 A
- Max rDS(on) = 1.6 mΩ at VGS = 10 V, ID = 32 A
- Max rDS(on) = 2.0 mΩ at VGS = 4.5 V, ID = 28 A
- Low Inductance Packaging Shortens Rise/Fall Times, Result
- MOSFET Integration Enables Optimum Layout for Lower Circuit Inductance and Reduced Switch Node Ringing