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Fairchild Semiconductor Electronic Components Datasheet

FDP5690 Datasheet

60V N-Channel PowerTrenchTM MOSFET

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July 2000
FDP5690/FDB5690
60V N-Channel PowerTrenchTM MOSFET
General Description
This N-Channel MOSFET has been designed specifically
to improve the overall efficiency of DC/DC converters
using either synchronous or conventional switching PWM
controllers.
These MOSFETs feature faster switching and lower gate
charge than other MOSFETs with comparable RDS(on)
specifications resulting in DC/DC power supply designs
with higher overall efficiency.
Features
• 32 A, 60 V. RDS(ON) = 0.027 @ VGS = 10 V
RDS(ON) = 0.032 @ VGS = 6 V.
• Critical DC electrical parameters specified at evevated
temperature.
• Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient suppressor.
• High performance trench technology for extremely low
RDS(ON).
• 175°C maximum junction temperature rating.
D
D
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
FDP5690
FDB5690
VDSS
VGSS
ID
PD
TJ, TSTG
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current - Continuous
- Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
60
±20
32
100
58
0.4
-65 to +175
S
Units
V
V
A
W
W/°C
°C
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB5690
FDB5690
13’’
FDP5690
FDP5690
Tube
2.6
62.5
Tape Width
24mm
N/A
°C/W
°C/W
Quantity
800
45
2000 Fairchild Semiconductor International
FDP5690/FDB5690 Rev. C


Fairchild Semiconductor Electronic Components Datasheet

FDP5690 Datasheet

60V N-Channel PowerTrenchTM MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
Tc = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 30 V, ID = 32A
IAR Maximum Drain-Source Avalanche Current
80 mJ
32 A
Off Characteristics
BVDSS
Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA
60
V
BVDSS Breakdown Voltage Temperature ID = 250 µA, Referenced to 25°C 61 mV/°C
TJ Coefficient
IDSS Zero Gate Voltage Drain Current VDS = 48 V, VGS = 0 V
1 µA
IGSSF
Gate-Body Leakage Current,
Forward
VGS = 20 V, VDS = 0 V
100 nA
IGSSR
Gate-Body Leakage Current,
Reverse
VGS = -20 V, VDS = 0 V
-100
nA
On Characteristics (Note 1)
VGS(th)
Gate Threshold Voltage
VGS(th)
TJ
RDS(on)
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
ID(on)
On-State Drain Current
gFS Forward Transconductance
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 16 A,
VGS = 10 V, ID = 16 A,TJ = 125°C
VGS = 6 V, ID = 15 A
VGS = 10 V, VDS = 5 V
VDS = 5 V, ID = 16 A
2 2.4 4
V
-6.4 mV/°C
0.021 0.027
0.042 0.055
0.024 0.032
50
32
A
S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 25 V, VGS = 0 V,
f = 1.0 MHz
1120
160
80
pF
pF
pF
Switching Characteristics
td(on) Turn-On Delay Time
tr Turn-On Rise Time
td(off) Turn-Off Delay Time
tf Turn-Off Fall Time
Qg Total Gate Charge
Qgs Gate-Source Charge
Qgd Gate-Drain Charge
(Note 1)
VDD = 30 V, ID = 1 A,
VGS = 10 V, RGEN = 6
VDS = 15 V,
ID = 16 A, VGS = 10 V
10 18
9 18
24 39
10 18
23 33
3.9
6.8
ns
ns
ns
ns
nC
nC
nC
Drain-Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain-Source Diode Forward Current (Note 1)
VSD Drain-Source Diode Forward
Voltage
Note:
1. Pulse Test: Pulse Width 300 µs, Duty Cycle 2.0%
VGS = 0 V, IS = 16 A
(Note 1)
32
0.92 1.2
A
V
FDP5690/FDB5690 Rev. C


Part Number FDP5690
Description 60V N-Channel PowerTrenchTM MOSFET
Maker Fairchild Semiconductor
Total Page 16 Pages
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