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Fairchild Semiconductor Electronic Components Datasheet

FDP5645 Datasheet

60V N-Channel PowerTrench MOSFET

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March 2000
FDP5645/FDB5645
60V N-Channel PowerTrench® MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers.
These MOSFETs feature faster switching and lower
gate charge than other MOSFETs with comparable
RDS(ON) specifications.
The result is a MOSFET that is easy and safer to drive
(even at very high frequencies), and DC/DC power
supply designs with higher overall efficiency.
Features
80 A, 60 V.
RDS(ON) = 0.0095 @ VGS = 10 V
RDS(ON) = 0.011 @ VGS = 6 V.
Critical DC electrical parameters specified at
elevated temperature.
Rugged internal source-drain diode can eliminate the
need for an external Zener diode transient
suppressor.
High performance trench technology for extremely
low R .DS(ON)
175°C maximum junction temperature rating.
DD
G
D
S
TO-220
FDP Series
G
S
TO-263AB
FDB Series
G
S
Absolute Maximum Ratings TA=25oC unless otherwise noted
Symbol
V DSS
V GSS
ID
PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Gate-Source Voltage
Maximum Drain Current
– Continuous (note 3)
– Pulsed
Total Power Dissipation @ TC = 25°C
Derate above 25°C
Operating and Storage Junction Temperature Range
Maximum lead termperature for soldering purposes,
1/8“ from case for 5 seconds
Thermal Characteristics
RθJC Thermal Resistance, Junction-to-Case
RθJA Thermal Resistance, Junction-to-Ambient
Package Marking and Ordering Information
Device Marking
Device
Reel Size
FDB5645
FDB5645
13”
FDP5645
FDP5645
note 2
FDP5645 FDB5645
60
±20
80
300
125
0.83
-65 to +175
+275
1.2
62.5
Tape width
24mm
Units
V
V
A
W
W/°C
°C
°C
°C/W
°C/W
Quantity
800 units
© 2000 Fairchild Semiconductor Corporation
FDP5645/FDB5645 Rev B (W)


Fairchild Semiconductor Electronic Components Datasheet

FDP5645 Datasheet

60V N-Channel PowerTrench MOSFET

No Preview Available !

Electrical Characteristics
Symbol
Parameter
TA = 25°C unless otherwise noted
Test Conditions
Min Typ Max Units
Drain-Source Avalanche Ratings (Note 1)
WDSS
Single Pulse Drain-Source
Avalanche Energy
VDD = 40 V,
ID = 80 A
800 mJ
IAR Maximum Drain-Source Avalanche
Current
80 A
Off Characteristics
BV DSS
BV DSS
TJ
IDSS
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
IGSSF
IGSSR
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
On Characteristics (Note 1)
V GS(th)
V GS(th)
TJ
RDS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
ID(on) On–State Drain Current
gFS Forward Transconductance
VGS = 0 V, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VDS = 48 V,
VGS = 20 V,
VGS = 20 V,
VGS = 0 V
VDS = 0 V
VDS = 0 V
60
VDS = VGS, ID = 250 µA
ID = 250 µA, Referenced to 25°C
VGS = 10 V, ID = 40 A
VGS=10V, ID = 40 A, TJ=125°C
VGS = 6 V,
ID = 38 A
VGS = 10 V, VDS = 10 V
VDS = 5 V,
ID = 40 A
2
60
V
64 mV/°C
1
100
–100
µA
nA
nA
4V
-7.8 mV/°C
8 9.5 m
13 18
9 11
A
88 S
Dynamic Characteristics
Ciss Input Capacitance
Coss Output Capacitance
Crss Reverse Transfer Capacitance
VDS = 30 V,
f = 1.0 MHz
V GS = 0 V,
4468
810
198
pF
pF
pF
Switching Characteristics
td(on) Turn–On Delay Time
tr Turn–On Rise Time
td(off) Turn–Off Delay Time
tf Turn–Off Fall Time
Qg Total Gate Charge
Qgs Gate–Source Charge
Qgd Gate–Drain Charge
(Note 2)
VDD = 30 V,
VGS = 10 V,
ID = 1 A,
RGEN = 6
VDS = 30 V,
VGS = 10 V
ID = 80 A,
21 30
13 20
77 90
42 50
76 107
18
21
ns
ns
ns
ns
nC
nC
nC
Drain–Source Diode Characteristics and Maximum Ratings
IS Maximum Continuous Drain–Source Diode Forward Current
IS Maximum Pulsed Drain–Source Diode Forward Current
VSD Drain–Source Diode Forward
VGS = 0 V, IS = 40 A
Voltage
80
300
0.9 1.3
A
A
V
Notes:
1. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
2. TO-220 package is supplied in tube / rail @ 45 pieces per rail.
3. Calculated continuous current based on maximum allowable junction temperature. Actual maximum continuous current limited by package constraints to 75A
FDP5645/FDB5645 Rev. B (W)


Part Number FDP5645
Description 60V N-Channel PowerTrench MOSFET
Maker Fairchild Semiconductor
Total Page 10 Pages
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