Datasheet4U Logo Datasheet4U.com

FDMS9600S - Dual N-Channel PowerTrench MOSFET

General Description

Q1: N-Channel Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A Max rDS(on) = 7.0m: at VGS = 4.5V, ID = 14A Low Qg high side MOSFET Low rDS(on)

Key Features

  • General.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FDMS9600S Dual N-Channel MOSFET VBsemi
FDMS9409-F085 N-Channel Power MOSFET ON Semiconductor
FDMS9410-F085 N-Channel Power MOSFET ON Semiconductor
FDMS9410L-F085 40V 50A N-Channel MOSFET ON Semiconductor
FDMS003N08C N-Channel MOSFET ON Semiconductor

Other Datasheets by Fairchild (onsemi)

Part Number Description
FDMS9620S 30V Dual N-Channel PowerTrench MOSFET
FDMS9409_F085 MOSFET
FDMS9410_F085 MOSFET
FDMS015N04B MOSFET
FDMS0300S MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FDMS9600S Dual N-Channel PowerTrench® MOSFET FDMS9600S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 32A, 8.5m: Q2: 30V, 30A, 5.5m: May 2014 Features General Description Q1: N-Channel „ Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A „ Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel „ Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A „ Max rDS(on) = 7.0m: at VGS = 4.5V, ID = 14A „ Low Qg high side MOSFET „ Low rDS(on) low side MOSFET „ Thermally efficient dual Power 56 package This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss "High Side" MOSFET is complemented by a Low Conduction Loss "Low Side" SyncFET.