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FDMS9600S - Dual N-Channel PowerTrench MOSFET

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Description

Q1: N-Channel Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A Max rDS(on) = 7.0m: at VGS = 4.5V, ID = 14A Low Qg high side MOSFET Low rDS(on)

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Datasheet Details

Part number FDMS9600S
Manufacturer Fairchild Semiconductor
File Size 359.74 KB
Description Dual N-Channel PowerTrench MOSFET
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FDMS9600S Dual N-Channel PowerTrench® MOSFET FDMS9600S Dual N-Channel PowerTrench® MOSFET Q1: 30V, 32A, 8.5m: Q2: 30V, 30A, 5.5m: May 2014 Features General Description Q1: N-Channel „ Max rDS(on) = 8.5m: at VGS = 10V, ID = 12A „ Max rDS(on) = 12.4m: at VGS = 4.5V, ID = 10A Q2: N-Channel „ Max rDS(on) = 5.5m: at VGS = 10V, ID = 16A „ Max rDS(on) = 7.0m: at VGS = 4.5V, ID = 14A „ Low Qg high side MOSFET „ Low rDS(on) low side MOSFET „ Thermally efficient dual Power 56 package This device includes two specialized MOSFETs in a unique dual Power 56 package. It is designed to provide an optimal Synchronous Buck power stage in terms of efficiency and PCB utilization. The low switching loss "High Side" MOSFET is complemented by a Low Conduction Loss "Low Side" SyncFET.
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