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FDMS86163P - P-Channel PowerTrench MOSFET

Description

This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.

Active Clamp Switch Load Switch Top Bottom Pin 1 SS

Features

  • Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A.
  • Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A.
  • Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg.
  • This product is optimised for fast switching.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMS86163P P-Channel PowerTrench® MOSFET FDMS86163P P-Channel PowerTrench® MOSFET -100 V, -50 A, 22 mΩ Features „ Max rDS(on) = 22 mΩ at VGS = -10 V, ID = -7.9 A „ Max rDS(on) = 30 mΩ at VGS = -6 V, ID = -5.9 A „ Very low RDS-on mid voltage P-channel silicon technology optimised for low Qg „ This product is optimised for fast switching applications as well as load switch applications „ 100% UIL tested „ RoHS Compliant May 2014 General Description This P-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
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