FDMS8560S mosfet equivalent, mosfet.
* Max rDS(on) = 1.8 mΩ at VGS = 10 V, ID = 30 A
* Max rDS(on) = 2.1 mΩ at VGS = 4.5 V, ID = 28 A
* High performance technology for extremely low rDS(on)
*.
* Synchronous Rectifier for DC/DC Converters
* Telecom Secondary Side Rectification
* High End Server/Workst.
This N-Channel SyncFETTM is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 342.29KB)