FDMS8558SDC Datasheet | Fairchild Semiconductor

Features - Dual Cool TM PQFN package - Max r DS(on) = 1.5 mΩ at VGS = 10 V, ID = 38 A - Max r DS(on) = 1.7 mΩ at VGS = 4.5 V, ID = 36 A - High performance technology for extremely low r DS(on) - Sync FETTM Schottky Body Diode - Ro HS pliant General Description This N-Channel Sync FETTM is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and package technologies have been bined to offer the lowest r DS(on) while maintaining excellent switching performance by extremely low Junction-to Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode. Applications - Synchronous Rectifier for DC/DC Converters - Tele Secondary Side Rectification - High End Server/Workstation Vcore Low Side Pin 1 D5 D6 4G 3S Top Power 56 Bottom D7...