* Max rDS(on) = 1.1 mΩ at VGS = 10 V, ID = 44 A
* Max rDS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 37 A
* Advanced Package and Silicon combination for low rDS(on) an.

* OringFET / Load Switching
* Synchronous Rectification
* DC-DC Conversion Pin 1 S D D D D S S D D G S.

This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced Power Trench® process. Advancements in both silicon and Dual CoolTM package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching p.

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