FDMS8320L
FDMS8320L is N-Channel MOSFET manufactured by onsemi.
Features
- Max r DS(on) = 1.1 mΩ at VGS = 10 V, ID = 32 A
- Max r DS(on) = 1.5 mΩ at VGS = 4.5 V, ID = 27 A
- Advanced Package and Silicon bination for low r DS(on) and high efficiency
- Next generation enhanced body diode technology, engineered for soft recovery
- MSL1 robust package design
- 100% UIL tested
- Ro HS pliant
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low r DS(on), fast switching speed ang body diode reverse recovery performance.
Applications
- Oring FET / Load Switching
- Synchronous Rectification
- DC-DC Conversion
Top Pin 1
Bottom
Pin 1
Power 56
MOSFET Maximum Ratings TA = 25 °C unless otherwise noted.
Symbol VDS VGS
EAS PD TJ, TSTG
Parameter
Drain to Source Voltage
Gate to Source Voltage
Drain Current -Continuous -Continuous -Continuous -Pulsed
TC = 25 °C TC = 100 °C TA = 25 °C
Single Pulse Avalanche Energy
Power Dissipation
TC = 25 °C
Power Dissipation
TA = 25 °C
Operating and Storage Junction Temperature Range
Thermal Characteristics
(Note 5) (Note 5) (Note 1a) (Note 4) (Note 3)
(Note 1a)
Ratings 40 ±20 248 157 36 943 264 104 2.5
-55 to...
