FDMS7672 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 19 A
* Max rDS(on) = 6.9 mΩ at VGS = 4.5 V, ID = 15 A
* Advanced Package and Silicon design for low rDS(on) and hig.
* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant
October 2014
General Description
This N-Cha.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate char.
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