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FDMS7676 - N-Channel MOSFET

Description

Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A Advanced Package and Silicon design for low rDS(on) and high efficiency

Next generation enhanced body diode technology, engineered for soft recovery.

Features

  • General.

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Full PDF Text Transcription (Reference)

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FDMS7676 N-Channel PowerTrench® MOSFET October 2014 FDMS7676 N-Channel PowerTrench® MOSFET 30 V, 5.5 m: Features General Description „ Max rDS(on) = 5.5 m: at VGS = 10 V, ID = 19 A „ Max rDS(on) = 7.6 m: at VGS = 4.5 V, ID = 15 A „ Advanced Package and Silicon design for low rDS(on) and high efficiency „ Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.
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