FDMS7660 mosfet equivalent, n-channel mosfet.
* Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
* Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
* Advanced Package and Silicon combination for low rDS(on) an.
* MSL1 robust package design
* 100% UIL tested
* RoHS Compliant
April 2009
General Description
This N-Chann.
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate char.
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