FDMS6673BZ datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A
* Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A
* Advanced Package and Silicon.

Application

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Description

* Max rDS(on) = 6.8 m: at VGS = -10 V, ID = -15.2 A
* Max rDS(on) = 12.5 m: at VGS = -4.5 V, ID = -11.2 A
* Advanced Package and Silicon Combination for Low rDS(on)
* HBM ESD Protection Level of 8 kV Typical(Note 3)
* MSL1 Robust.

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