FDMS6681Z datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 3.2 m: at VGS = -10 V, ID = -21.1 A
* Max rDS(on) = 5.0 m: at VGS = -4.5 V, ID = -15.7 A
* Advanced Package and Silicon combination for low rD.

Application

Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection.

Description

The FDMS6681Z has been designed to minimize losses in load switch applications. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) and ESD protection. Applications
* Load Switch in Notebook and S.

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