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FDMC610P - MOSFET

General Description

This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.

Key Features

  • Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A.
  • Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A.
  • State-of-the-art switching performance.
  • Lower output capacitance, gate resistance, and gate charge boost efficiency.
  • Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction.
  • RoHS Compliant November 2013 General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDMC610P P-Channel PowerTrench® MOSFET FDMC610P P-Channel PowerTrench® MOSFET -12 V, -80 A, 3.9 mΩ Features „ Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A „ Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A „ State-of-the-art switching performance „ Lower output capacitance, gate resistance, and gate charge boost efficiency „ Shielded gate technology reduces switch node ringing and increases immunity to EMI and cross conduction „ RoHS Compliant November 2013 General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.