* Max rDS(on) = 3.9 mΩ at VGS = -4.5 V, ID = -22 A
* Max rDS(on) = 6.4 mΩ at VGS = -2.5 V, ID = -16 A
* State-of-the-art switching performance
* Lower out.

* High side switching for high end computing
* High power density DC-DC synchronous buck converter Pin 1 D D D.

This P-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate char.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts