FDMC610P Datasheet Text
MOSFET
- P-Channel, POWERTRENCH)
-12 V, -80 A, 3.9 mW
FDMC610P
General Description This P- Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.
Features
- Max rDS(on) = 3.9 mW at VGS =
- 4.5 V, ID =
- 22 A
- Max rDS(on) = 6.4 mW at VGS =
- 2.5 V, ID =
- 16 A
- State- of- the- art Switching Performance
- Lower Output Capacitance, Gate Resistance, and Gate Charge
Boost Efficiency
- Shielded Gate Technology Reduces Switch Node Ringing and
Increases Immunity to EMI and Cross Conduction
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- High Side Switching for High End puting
- High Power Density DC- DC Synchronous Buck Converter
MOSFET MAXIMUM RATINGS (TA = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage
ID Drain Current
- Continuous TC = 25°C
- Continuous (Note 1a)...
