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FDMA291P - Single P-Channel 1.8V Specified PowerTrench MOSFET

General Description

This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications.

Key Features

  • a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode.

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www.DataSheet4U.com FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET May 2006 May 2006 FDMA291P Single P-Channel 1.8V Specified PowerTrench® MOSFET General Description This device is designed specifically for battery charge or load switching in cellular handset and other ultraportable applications. It features a MOSFET with low on-state resistance. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Pin 1 Drain Source D 1 D 2 G 3 Bottom Drain Contact Features • –6.6 A, –20V. rDS(ON) = 42 mΩ @ VGS = –4.5V rDS(ON) = 58 mΩ @ VGS = –2.5V rDS(ON) = 98 mΩ @ VGS = –1.8V • Low profile – 0.