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FDMA2002NZ - Dual N-Channel MOSFET

General Description

This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra

portable applications.

Key Features

  • two independent N.
  • Channel MOSFETs with low on.
  • state resistance for minimum conduction losses. The MicroFETt 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode.

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Datasheet Details

Part number FDMA2002NZ
Manufacturer onsemi
File Size 190.37 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet FDMA2002NZ Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – Dual, N-Channel, POWERTRENCH) 30 V, 2.9 A, 123 mW FDMA2002NZ General Description This device is designed specifically as a single package solution for dual switching requirements in cellular handset and other ultra−portable applications. It features two independent N−Channel MOSFETs with low on−state resistance for minimum conduction losses. The MicroFETt 2x2 offers exceptional thermal performance for its physical size and is well suited to linear mode applications. Features • 2.9 A, 30 V RDS(on) = 123 mW at VGS = 4.5 V RDS(on) = 140 mW at VGS = 3.0 V RDS(on) = 163 mW at VGS = 2.5 V • Low Profile − 0.8 mm Maximum − In the New Package MicroFET 2x2 mm • HBM ESD Protection Level > 1.