FDFMA2P859T diode equivalent, integrated p-channel powertrench mosfet and schottky diode.
MOSFET:
* Max rDS(on) = 120 m: at VGS =
–4.5 V, ID =
–3.0 A
* Max rDS(on) = 160 m: at VGS =
–2.5 V, ID =
.
It features a MOSFET with low on-state resistance and an independently connected low forward voltage schottky diode for.
This device is designed specifically as a single package solution for the battery charge switch in cellular handset and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward vo.
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