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FDD8580 - N-Channel MOSFET

General Description

Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V Low gate resistance 100% Avalanche tested RoHS compliant tm This N-Channel MOSFET has been designed specifi

Key Features

  • General.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD8580/FDU8580 N-Channel PowerTrench® MOSFET July 2006 FDD8580/FDU8580 N-Channel PowerTrench® MOSFET 20V, 35A, 9mΩ Features General Description „ Max rDS(on) = 9mΩ at VGS = 10V, ID = 35A „ Max rDS(on) =13mΩ at VGS = 4.5V, ID = 33A „ Low gate charge: Qg(TOT) = 19nC(Typ), VGS = 10V „ Low gate resistance „ 100% Avalanche tested „ RoHS compliant tm This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on) and fast switching speed. Application „ Vcore DC-DC for Desktop Computers and Servers „ VRM for Intermediate Bus Architecture D www.DataSheet4U.