FDD850N10LD Key Features
- RDS(on) = 61 mΩ (Typ.) @ VGS = 10 V, ID = 12 A
- RDS(on) = 64 mΩ (Typ.) @ VGS = 5.0 V, ID = 12 A
- Low Gate Charge (Typ. 22.2 nC)
- Low Crss (Typ. 42 pF)
- Fast Switching
- 100% Avalanche Tested
- Improved dv/dt Capability
- RoHS pliant
| Part Number | Description |
|---|---|
| FDD850N10L | MOSFET |
| FDD8580 | N-Channel MOSFET |
| FDD8586 | N-Channel PowerTrench MOSFET |
| FDD8424H | Dual N & P-Channel PowerTrench MOSFET |
| FDD8424H_F085A | Dual N & P-Channel PowerTrench MOSFET |