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FDD850N10L - MOSFET

General Description

This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance.

Consumer Appliances LED TV and Monitor Synchronous Rectific

Key Features

  • RDS(on) = 61 mΩ ( yp. ) @ VGS = 10 V, ID = 12 A.
  • RDS(on) = 64 mΩ (Typ. ) @ VGS = 5 V, ID = 12 A.
  • Low Gate Charge (Typ. 22.2 nC).
  • Low Crss (Typ. 42 pF).
  • Fast Switching.
  • 100% Avalanche Tested.
  • Improved dv/dt Capability.
  • RoHS Compliant.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDD850N10L — N-Channel PowerTrench® MOSFET FDD850N10L N-Channel PowerTrench® MOSFET 100 V, 15.7 A, 75 mΩ November 2013 Features • RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A • RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A • Low Gate Charge (Typ. 22.2 nC) • Low Crss (Typ. 42 pF) • Fast Switching • 100% Avalanche Tested • Improved dv/dt Capability • RoHS Compliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced PowerTrench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application • Consumer Appliances • LED TV and Monitor • Synchronous Rectification • Uninterruptible Power Supply • Micro Solar Inverter D G S D D-PAK G MOSFET Maximum Ratings TC = 25oC unless otherwise noted.