FDD850N10L Datasheet | Fairchild Semiconductor

Features - RDS(on) = 61 mΩ ( yp.) @ VGS = 10 V, ID = 12 A - RDS(on) = 64 mΩ (Typ.) @ VGS = 5 V, ID = 12 A - Low Gate Charge (Typ. 22.2 n C) - Low Crss (Typ. 42 p F) - Fast Switching - 100% Avalanche Tested - Improved dv/dt Capability - Ro HS pliant Description This N-Channel MOSFET is produced using Fairchld Semiconductor’s advanced Power Trench® process that has been tailored to minimize the on-state resistance and maintain superior switching performance. Application - Consumer Appliances - LED TV and Monitor - Synchronous Rectification - Uninterruptible Power Supply - Micro Solar Inverter D-PAK MOSFET Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS VGSS IDM EAS dv/dt Parameter Drain to Source Voltage Gate to Source Voltage Drain Current Drain Current - Continuous (TC = 25o C) -...