Datasheet Summary
FDD7N20 / FDU7N20 200V N-Channel MOSFET
FDD7N20 / FDU7N20
N-Channel MOSFET
200V, 5A, 0.69Ω
Features
- RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A
- Low gate charge( Typ. 5nC )
- Low Crss ( Typ. 5pF )
- Fast switching
- 100% avalanche tested
- Improved dv/dt capability
- RoHS pliant
April 2007
UniFETTM tm
Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited...