FDD7N20 Datasheet | Fairchild Semiconductor

FDD7N20 / FDU7N20 200V N-Channel MOSFET FDD7N20 / FDU7N20 N-Channel MOSFET 200V, 5A, 0.69Ω Features - RDS(on) = 0.58Ω ( Typ. ) @ VGS = 10V, ID = 2.5A - Low gate charge( Typ. 5n C ) - Low Crss ( Typ. 5p F ) - Fast switching - 100% avalanche tested - Improved dv/dt capability - Ro HS pliant April 2007 Uni FETTM tm Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especically tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and mutation mode. These devices are well suited for high efficient switched mode power supplies and active power factor correction. GD S D-PAK FDD Series G DS I-PAK FDU Series MOSFET Maximum Ratings TC = 25o C unless otherwise noted Symbol VDSS VGSS IDM EAS IAR EAR dv/dt Parameter Drain to Source Voltage Gate to...