FDD7N25LZ Key Features
- RDS(on) = 430 mΩ (Typ.) @ VGS = 10 V, ID = 3.1 A
- Low Gate Charge (Typ. 12 nC)
- Low Crss (Typ. 8 pF)
- 100% Avalanche Tested
- Improved dv/dt Capability
- ESD Improved Capability
- RoHS pliant
- Part: FDD7N25LZ
- Description: N-Channel MOSFET
- Manufacturer: Fairchild Semiconductor
- Size: 660.21 KB
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