Datasheet4U Logo Datasheet4U.com

FCPF4300N80Z - MOSFET

Description

SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance.

Features

  • RDS(on) = 3.4 Ω (Typ. ).
  • Ultra Low Gate Charge (Typ. Qg = 6.8 nC).
  • Low Eoss (Typ. 0.8 uJ @ 400V).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 36 pF).
  • 100% Avalanche Tested.
  • RoHS Compliant.
  • ESD Improved Capability.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
FCPF400N60 N-Channel MOSFET INCHANGE
FCPF400N80ZCN N-Channel MOSFET INCHANGE
FCPF400N80ZL1-F154 N-Channel MOSFET ON Semiconductor
FCPF067N65S3 N-Channel Power MOSFET ON Semiconductor
FCPF067N65S3 N-Channel MOSFET INCHANGE

Other Datasheets by Fairchild (onsemi)

Part Number Description
FCPF400N60 MOSFET
FCPF400N80Z MOSFET
FCPF400N80ZL1 N-Channel MOSFET
FCPF067N65S3 N-Channel MOSFET
FCPF11N60 SuperFET MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
FCPF4300N80Z — N-Channel SuperFET® II MOSFET August 2015 FCPF4300N80Z N-Channel SuperFET® II MOSFET 800 V, 2.2 A, 4.3 Ω Features • RDS(on) = 3.4 Ω (Typ.) • Ultra Low Gate Charge (Typ. Qg = 6.8 nC) • Low Eoss (Typ. 0.8 uJ @ 400V) • Low Effective Output Capacitance (Typ. Coss(eff.) = 36 pF) • 100% Avalanche Tested • RoHS Compliant • ESD Improved Capability Applications Description SuperFET® II MOSFET is Fairchild Semiconductor’s brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy.
Published: |