FCH35N60 mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ.RDS(on) = 79 mΩ
* Ultra Low Gate Charge ( Typ. Qg = 139 nC )
* Low Effective Output Capacitance (Typ. Coss.eff = 340 pF)
* .
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
Application
* Solar I.
SuperFET® MOSFET is Fairchild Semiconductor®’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tail.
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