FCA47N60_F109 mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* Typ. RDS(on) = 58 mΩ
* Ultra Low Gate Charge (Typ. Qg= 210 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
* .
such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.
D
G D S
TO-3PN
Absolut.
SuperFET® MOSFET is Fairchild Semiconductor’s first generation of high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailor.
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