FCA47N60F - N-Channel MOSFET

onsemi

General Description

SUPERFET MOSFET is onsemi’s first generation of high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Key Features

650 V @ TJ = 150°C.
Typ. RDS(on) = 62 mW.
Fast Recovery Time (Typ. Trr = 240 ns).
Ultra Low Gate Charge (Typ. Qg = 210 nC).
Low Effective Output Capacitance (Typ. Coss(eff. ) = 420 pF).
100% Avalanche Tested.
RoHS Compliant.

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FCA47N60F n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FCA47N60F
Manufacturer	onsemi
File Size	220.45 KB
Description	N-Channel MOSFET
Datasheet	FCA47N60F Datasheet

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Full PDF Text Transcription (Reference)

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MOSFET – N-Channel, SUPERFET), FRFET) 600 V, 47 A, 73 mW FCA47N60F Description SUPERFET MOSFET is onsemi’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conduction loss, provide superior switching performance, dv/dt rate and higher avalanche energy. Consequently, SUPERFET MOSFET is very suitable for the switching power applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. SUPERFET FRFET MOSFET’s optimized body diode reverse recovery performance can remove additional component and improve system reliability. Features • 650 V @ TJ = 150°C • Typ.