33N25 fdb33n25 equivalent, fdb33n25.
* 33A, 250V, RDS(on) = 0.094Ω @VGS = 10 V
* Low gate charge ( typical 36.8 nC)
* Low Crss ( typical 39 pF)
* Fast switching
* 100% avalanche tested
These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switch.
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