Datasheet4U Logo Datasheet4U.com

33N10 - N-Channel MOSFET Transistor

Features

  • Static drain-source on-resistance: RDS(on) ≤60mΩ.
  • Enhancement mode.
  • Fast Switching Speed.
  • 100% avalanche tested.
  • Minimum Lot-to-Lot variations for robust device performance and reliable operation.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
33N10 FQP33N10 Fairchild Semiconductor
33N25 FDB33N25 Fairchild Semiconductor
33N60DM6 N-Channel Power MOSFET STMicroelectronics

Other Datasheets by Inchange Semiconductor

Part Number Description

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
isc N-Channel MOSFET Transistor FEATURES · Static drain-source on-resistance: RDS(on) ≤60mΩ · Enhancement mode · Fast Switching Speed · 100% avalanche tested · Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION · Switching power supplies,converters,AC and DC motor controls ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 100 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 33 IDM Drain Current-Single Pulsed 132 PD Total Dissipation @TC=25℃ 150 Tj Max. Operating Junction Temperature 150 Tstg Storage Temperature -55~150 UNIT V V A A W ℃ ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth(ch-c) Channel-to-case thermal resistance Rth(ch-a) Channel-to-ambient thermal resistance MAX 1.
Published: |